Design and Coupled Thermo-Mechanical Analysis of Silicon Carbide Primary Mirror Assembly

Based on the principle that the thermal expansion coefficient of the support structure should match that of the mirror, three schemes of primary mirror assembly were designed. Of them, the first is fused silica mirror plus 4J32 flexible support plus ZTC4 sup-port back plate, the second K9 mirror plus 4J45 flexible support plus ZTC4 support back plate, and the third SiC mirror plus SiC rigid support back plate. A coupled thermo-mechanical analysis of the three primary mirror assemblies was made with finite element method. The results show that the SiC assembly is the best of all schemes in terms of their combination properties due to its elimination of the thermal expansion mismatch between the materials. The analytical results on the cryogenic property of the SiC primary mirror assembly show a higher surface finish of the SiC mirror even under the cryogenic condition.     

SOI结构材料红外吸收光谱的研究

用ＳＩＭＯＸ（Ｓｅｐａｒａｔｉｏｎｂｙ　Ｉｍｐｌａｎｔｅｄ　Ｏｘｙｇｅｎ，即氧注入隔离）技术制备ＳＯＩ－ＣＭＯＳ用的ＳＯＩ（Ｓｉｌｉｃｏｎ　ＯｎＩｎｓｕ　ｌａｔｏｒ，即绝缘体上长单晶硅膜）样品；对ＳＯＩ样品红外吸收光谱的分析，从而计算了ＳＯＩ结构材料中ＳｉＯ２埋层的厚度；测试样品不同点的红外吸收光谱，可考察样品ＳｉＯ２埋层厚度的不均匀性，据此，并可分析与之相关的ＳＯＩ样品的质量参数．这种分析方法，是一种无损的检测手段，具有实用价值．     

基于思维导图方法的复合材料中介机匣设计

为了进一步降低中介机匣质量,达到下一代航空发动机总体给定的质量指标,应用复合材料对现有的全钛合金中介机匣进行改进结构设计。在目前中国复合材料性能与国际先进水平尚有一定差距的情况下,利用思维导图方法对中介机匣的功能和主要结构特征以及主要限制条件进行了详细分析,从工程实际角度出发,确立了复合材料中介机匣的结构设计准则,运用次要承力部位上使用复合材料的结构设计手段,完成了复合材料中介机匣的结构设计,实现了中介机匣减质约8%的目标,满足了总体指标要求。     

单晶硅超精密切削加工表面粗糙度预测模型的建立及试验研究

利用超精密机床进行切削加工时,对于操作者来说,首先面临的问题是最优切削用量组合的确定,这也是最让操作者感到棘手的问题.单晶硅成功的切削过程取决于优化工艺参数,比如进给量、背吃刀量、切削速度等.为了建立精确可靠的表面粗糙度预测模型,本文将遗传基因算法应用于回归分析,同时在超精密机床上对该预测模型进行了试验验证.     

探针游移对方形四探针测试仪测量硅片薄层电阻的影响分析

分析方形四探针探针游移对其测量微区薄层电阻的影响,完成了测试薄层电阻的公式的推导,对游移后产生的误差影响进行了统计数据分析,得出了测试结果满足测试误差要求的结论。     

掺杂纳米硅薄膜的生长特性

采用等离子增强化学气相沉积(PECVD)方法成功的沉积出掺杂(主要是磷、硼)纳米硅薄膜.探讨了各种生长工艺条件对掺杂纳米硅薄膜的结构与性能的影响及其规律.利用高分辨电镜(HREM)、Raman散射等手段对掺入不同杂质后的纳米硅薄膜的微结构进行初步研究,并从实验和理论上对掺杂纳米硅薄膜的生长特性进行了探讨.得出掺杂纳米硅薄膜具有与掺杂非晶硅薄膜和掺杂微晶硅薄膜不同的生长特性,即杂质原子绝大部分是非活性的,只有很少一部分在薄膜中起施主作用.大部分非活性的杂质原子存在于晶粒间界.     

Fabrication and Life Prediction of SSiC Ceramic Joint Joined with Silicon Resin YR3370

Joints between sintered silicon carbide （SSiC） were produced using a polysiloxane silicon resin YR3370 （GE Toshiba Silicones） as joining material. Samples were heat treated in a 99.99% nitrogen flux at temperatures ranging from 1 100 ℃ to 1 300 ℃. Three point bending strength of the joint reached the maximum of 179 MPa as joined at 1 200℃. The joining layer is continuous, homogeneous and densified and has a thickness of 2 μm -5μm. The joining mechanism is that the amorphous silicon oxycarbide （SixOyCz） ceramic pyrolyzed from silicon resin YR3370 acts as an inorganic adhesive to SSiC substrate, which means the formation of the continuous Si-C bond structure between SixOyCz structure and SSiC substrate. Life prediction of the ceramic joint can be realized through the measurement of the critical time of the joint after the cyclic loading test.     

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

The hydrogenated amorphous silicon nitride （SiNx） thin films embedded with nano-structural silicon were prepared and the micro- structures at the interface of silicon nano-grains/SiNx were identified by the optical absorption and Raman scattering measurements. Characterized by the exponential tail of optical absorption and the band-width of the Raman scattering TO mode, the disorder in the interface region increases with the gas flow ratio increasing. Besides, as reflected by the sub-gap absorption coefficients, the density of interface defect states decreases, which can be attributed to the structural mismatch in the interface region and also the changes of hydrogen content in the deposited films. Additional annealing treatment results in a significant increase of defects and degree of disorder, for which the hydrogen out-diffusion in the annealing process would be responsible.     

Al-Si合金几种变质剂变质作用差异的探讨

Al-Si合金中几种常用变质剂的变质效果明显不同。从不同角度对各种元素的变质作用机理进行了探讨,但对于这些元素在变质效果上的差异尚未得到完满的解释。作者前期的工作采用XPS和AES表面分析技术检测了Sr在Si相的特定晶面的吸附性。本文将运用同样的实验方法,分别对Na、RE、Sb等变质剂作相应的考察,并对这些变质剂变质作用的差异进行探讨。     

硅的分布对铝—硅涂层抗热腐蚀性能的影响

利用ＲＦＬ热腐蚀试验装置，在温度为９００℃，盐浓度２０～１００ｐｐｍ，试验时间２００小时的条件下，研究了三种具有不同硅分布形式的Ａｌ－Ｓｉ涂层的抗热腐蚀性能。试验结果表明：涂层的抗热腐蚀性能与涂层中硅的分布形式密切相关。在涂层硅含量相当的情况下，硅呈内高外低的形式分布，可使涂层获得更佳的抗热腐蚀性能。